High-voltage 4H-SiC Schottky barrier diodes fabricated on (03(3)over-bar8) with closed micropipes

被引：8
|
作者：
Kimoto, T [1 ]
Fujimiza, K
Shiomi, H
Matsunami, H
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
[2] SiXON Ltd, Ukyo Ku, Kyoto 6150065, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 1A-B期
关键词：
silicon carbide; Schottky barrier diode; power device; dislocation; wide band-gap semiconductor;
D O I：
10.1143/JJAP.42.L13
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ni/4H-SiC Schottky barrier diodes have been fabricated on homoepitaxial layers grown on. 4H-SiC(03 (3) over bar8) substrates. Micropipes existing in the substrates were almost completely dissociated during epitaxial growth. Schottky barrier diodes processed on the areas with closed micropipes exhibited low leakage current, at least, up to 1 kV. The difference in breakdown voltage between micropipe-free diodes and diodes with closed micropipes was less than 10%. A 2.9 kV-22 mOmega.cm(2) diode was realized on the area with closed micropipes.
引用
收藏
页码：L13 / L16
页数：4
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