Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation

被引：175
作者：
Afanas'ev, VV
Stesmans, A
Ciobanu, F
Pensl, G
Cheong, KY
Dimitrijev, S
机构：
[1] Univ Leuven, Dept Phys, B-3000 Louvain, Belgium
[2] Univ Erlangen Nurnberg, Dept Appl Phys, D-91058 Erlangen, Germany
[3] Griffith Univ, Sch Microelect Engn, Nathan, Qld 411, Australia
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期
关键词：
D O I：
10.1063/1.1532103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An analysis of fast and slow traps at the interface of 4H-SiC with oxides grown in O-2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects located in the near-interfacial oxide layer. In addition, the analysis confirms that the fast interface states related to clustered carbon are also reduced by nitridation. (C) 2003 American Institute of Physics.
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页码：568 / 570
页数：3
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