Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution

被引:115
作者
Holman, Zachary C. [1 ]
Liu, Chin-Yi [1 ]
Kortshagen, Uwe R. [1 ]
机构
[1] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA
关键词
Nanocrystal; transistor; FET; germanium; silicon; thin film; QUANTUM DOTS; TRANSPORT-PROPERTIES; HYDROGEN; SURFACE; SOLIDS; DESORPTION; SEMICONDUCTORS; TEMPERATURE;
D O I
10.1021/nl101413d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging. field of semiconductor nanocrystal thin film devices We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0 02 and 0 006 cm(2) V-1 s(-1). respectively Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology
引用
收藏
页码:2661 / 2666
页数:6
相关论文
共 39 条
  • [1] Defect levels of dangling bonds in silicon and germanium through hybrid functionals
    Broqvist, Peter
    Alkauskas, Audrius
    Pasquarello, Alfredo
    [J]. PHYSICAL REVIEW B, 2008, 78 (07)
  • [2] High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 °C
    Cheng, IC
    Wagner, S
    [J]. THIN SOLID FILMS, 2003, 427 (1-2) : 56 - 59
  • [3] OXYGEN AND THE SURFACE ENERGY-LEVEL STRUCTURE ON GERMANIUM
    CLARKE, EN
    [J]. PHYSICAL REVIEW, 1954, 95 (01): : 284 - 285
  • [4] OXYGEN-INDUCED SURFACE CONDUCTIVITY ON GERMANIUM
    CLARKE, EN
    [J]. PHYSICAL REVIEW, 1953, 91 (03): : 756 - 757
  • [5] Oxygen related defects in germanium
    Clauws, P
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3): : 213 - 220
  • [6] ADSORPTION, DESORPTION, AND DECOMPOSITION OF HCL AND HBR ON GE(100) - COMPETITIVE PAIRING AND NEAR-FIRST-ORDER DESORPTION-KINETICS
    DEVELYN, MP
    YANG, YML
    COHEN, SM
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1994, 101 (03) : 2463 - 2475
  • [7] Transport properties of annealed CdSe colloidal nanocrystal solids
    Drndic, M
    Jarosz, MV
    Morgan, NY
    Kastner, MA
    Bawendi, MG
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) : 7498 - 7503
  • [8] High-performance thin-film transistors using semiconductor nanowires and nanoribbons
    Duan, XF
    Niu, CM
    Sahi, V
    Chen, J
    Parce, JW
    Empedocles, S
    Goldman, JL
    [J]. NATURE, 2003, 425 (6955) : 274 - 278
  • [9] TEMPERATURE-PROGRAMMED DESORPTION OF MOLECULAR-HYDROGEN FROM A SI(100)-2X1 SURFACE - THEORY AND EXPERIMENT
    FLOWERS, MC
    JONATHAN, NBH
    LIU, Y
    MORRIS, A
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1993, 99 (09) : 7038 - 7048
  • [10] Preparation of alkyl-surface functionalized germanium quantum dots via thermally initiated hydrogermylation
    Fok, E
    Shih, ML
    Meldrum, A
    Veinot, JGC
    [J]. CHEMICAL COMMUNICATIONS, 2004, (04) : 386 - 387