Control of silicidation in HfO2/Si(100) interfaces -: art. no. 041913

被引：40
作者：
Cho, DY
Park, KS
Choi, BH
Oh, SJ [1 ]
Chang, YJ
Kim, DH
Noh, TW
Jung, R
Lee, JC
Bu, SD
机构：
[1] Seoul Natl Univ, Ctr Strongly Correlated Mat Res, Seoul 151747, South Korea
[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea
[3] Seoul Natl Univ, ReCOE, Seoul 151747, South Korea
[4] Samsung Adv Inst Technol, Suwon 440900, South Korea
[5] Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 04期
关键词：
D O I：
10.1063/1.1856140
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The interfacial states of the HfO2 thin film grown on the Si(100) substrate by the pulsed laser deposition method is investigated in situ using x-ray photoelectron spectroscopy. They are found to depend on the HfO2 film thickness, oxygen pressure during the pulsed laser deposition growth, and the deposition process. The hafnium silicide is formed in an oxygen-deficient condition, and it can be most effectively controlled by the ambient oxygen pressure during film growth. The close relation between the silicide formation and abundance of the silicon suboxides at the interface is presented. (C) 2005 American Institute of Physics.
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页码：041913 / 1
页数：3
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