Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment

被引：107

作者：

Kang, Seunghun ^{[1
]}

Jang, Woo Sung ^{[2
]}

Morozovska, Anna N. ^{[3
]}

Kwon, Owoong ^{[1
]}

Jin, Yeongrok ^{[4
]}

Kim, Young-Noon ^{[2
]}

Bae, Hagyoul ^{[5
]}

Wane, Chenxi ^{[1
]}

Yang, Sang-Hyeok ^{[2
]}

Belianinov, Alex ^{[6
,7
]}

Randolph, Steven ^{[6
]}

Eliseev, Eugene A. ^{[8
]}

Collins, Liam ^{[6
]}

Park, Yeehyun ^{[1
]}

Jo, Sanghyun ^{[5
]}

Jung, Min-Hyoung ^{[2
]}

Go, Kyoung-June ^{[9
]}

Cho, Hae Won ^{[1
]}

Choi, Si-Young ^{[9
]}

Jang, Jae Hyuck ^{[10
]}

Kim, Sunkook ^{[1
]}

Jeon, Hu Young ^{[11
]}

Lee, Jaekwang ^{[4
]}

Ovchinnikova, Olga S. ^{[12
]}

Heo, Jinseong ^{[5
]}

Kalinin, Sergei, V ^{[6
,13
]}

Kim, Young-Min ^{[2
]}

Kim, Yunseok ^{[1
]}

机构：

[1] Sungkyunkwan Univ SKKU, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea

[2] Sungkyunkwan Univ SKKU, Dept Energy Sci, Suwon 16419, South Korea

[3] Natl Acad Sci Ukraine, Inst Phys, 46 Prospekt Nauky, UA-03028 Kiev, Ukraine

[4] Pusan Natl Univ, Dept Phys, Busan 46241, South Korea

[5] Samsung Adv Inst Technol, Suwon 16678, South Korea

[6] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[7] Sandia Natl Labs, Albuquerque, NM 87123 USA

[8] Natl Acad Sci Ukraine, Inst Problems Mat Sci, Krjijanovskogo 3, UA-03142 Kiev, Ukraine

[9] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea

[10] Korea Basic Sci Inst KBSI, Ctr Sci Instrumentat, Daejeon 34133, South Korea

[11] Ulsan Natl Inst Sci & Technol UNIST, Grad Sch Semicond Mat & Devices Engn, Ulsan 44919, South Korea

[12] Oak Ridge Natl Lab, Computat Sci & Engn Div, Oak Ridge, TN 37831 USA

[13] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37920 USA

来源：

SCIENCE | 2022年 / 376卷 / 6594期

基金：

新加坡国家研究基金会;

关键词：

CARBON CONTAMINATION; HEAVY-ION; WAKE-UP; FIELD; PHASE; POLARIZATION; DYNAMICS; IRRADIATION;

D O I：

10.1126/science.abk3195

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO2)-based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. The possible competing mechanisms, including He ion-induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

引用

页码：731 / +

页数：40

共 85 条

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