Silicon Structures with Variable Morphology of Pores Methods of Obtaining Physical and Optical Properties

被引：12

作者：

Starkov, V. V. ^{[1
]}

Gosteva, E. A. ^{[2
]}

Sedlovets, D. M. ^{[1
]}

Kah, M. O. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow District, Russia

[2] NUST MISiS, Moscow 119991, Russia

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2018年 / 165卷 / 11期

关键词：

POROUS SILICON; CARBON NANOFIBERS;

D O I：

10.1149/2.1101811jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper presents experimental results on the creation of porous silicon structures with variable pore morphology (GPS-var). At a pore depth of up to several hundred microns, the structures are characterized by the presence of a layer with nanoscale porous structures (hereinafter, nanoporous) on the surface. As the depth of etching increases, the pores smoothly transform into spongy, and then into a columnar structures with pore sizes of about a micron. (C) The Author(s) 2018. Published by ECS.

引用

页码：E534 / E539

页数：6

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