Carriers temperature for an operating silicon p-n junction

被引：2
作者：
Boukhatem, M. H.
El Tahchi, M.
Moussa, G. W. El Haj
Ajaka, M.
Khoury, A.
Mialhe, P.
机构：
[1] Univ Perpignan, LP2A, F-66860 Perpignan, France
[2] Univ Libanaise, Fac Sci 2, LPSE, Dept Phys, Jdeidet, Lebanon
来源：
MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 4-5期
关键词：
carriers temperature; carriers-lattice interaction; bandgap energy; silicon;
D O I：
10.1016/j.mejo.2007.02.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytic expression is introduced to describe the dependence of the carriers temperature with the lattice temperature. An experimental study of the temperature dependence of silicon junction characteristics leads to an experimental determination of the carriers temperature. An average error of 2.5% between the experimental values and the calculated values is obtained. The introduction of the carriers temperature is used to study the temperature dependence of the energy gap and to determine the value of the energy bandgap at 0 K. The carriers temperature is efficient to use in studying optoelectronic properties of silicon devices. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：615 / 619
页数：5
相关论文
共 15 条
[1]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[2]   Study and development of a silicon infrared diode operating under forward bias [J].
El Tahchi, M ;
Nassar, E ;
Mialhe, P .
MICROELECTRONICS JOURNAL, 2005, 36 (3-6) :260-263
[3]   New modelling method for forward junction I-V analysis [J].
El-Tahchi, M ;
Toufik, N ;
Pelanchon, F ;
Ajaka, M ;
Khoury, A ;
Mialhe, P .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (05) :487-491
[4]   TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN MONATOMIC SEMICONDUCTORS [J].
FAN, HY .
PHYSICAL REVIEW, 1950, 78 (06) :808-809
[5]   TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].
FAN, HY .
PHYSICAL REVIEW, 1951, 82 (06) :900-905
[6]   TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN GERMANIUM FROM CONDUCTIVITY AND HALL DATA [J].
JOHNSON, VA ;
FAN, HY .
PHYSICAL REVIEW, 1950, 79 (05) :899-899
[7]  
Moll J., 1964, PHYS SEMICONDUCTORS
[8]   Comparison of different analytical descriptions of the temperature dependence of the indirect energy gap in silicon [J].
Passler, R .
SOLID-STATE ELECTRONICS, 1996, 39 (09) :1311-1319
[9]   Alternative analytical descriptions of the temperature dependence of the energy gap in cadmium sulfide [J].
Passler, R .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 193 (01) :135-144
[10]  
Pässler R, 1999, PHYS STATUS SOLIDI B, V216, P975, DOI 10.1002/(SICI)1521-3951(199912)216:2<975::AID-PSSB975>3.0.CO
12