The Direct Insulator-Quantum Hall Transition

被引：3

作者：

Liang, Chi-Te ^{[1
,2
]}

Lo, Shun-Tsung ^{[3
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea

[3] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan

来源：

CHINESE JOURNAL OF PHYSICS | 2014年 / 52卷 / 04期

关键词：

FIELD-INDUCED DELOCALIZATION; PHASE-DIAGRAM; SPIN; CONDUCTIVITY; UNIVERSALITY;

D O I：

10.6122/CJP.52.1175

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The direct insulator-quantum Hall (I-QH) transition corresponds to a transition from an insulator to a high Landau-level-filling factor nu > 2 QH state, which is characterized by an approximately temperature T-independent longitudinal resistance of a few nm thick electron (or hole) layer. In this paper, we review both the experimental and theoretical results on the direct I-QH transition. In particular, we attempt to address several interesting yet unsettled issues in the field of the direct I-Q transition. We suggest that further studies are required for obtaining a thorough understanding of the direct I-QH transition observed in nano-scale charge layers.

引用

页码：1175 / 1193

页数：19

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