Intrinsic photoinduced anomalous Hall effect

被引：5

作者：

Vasyukov, D. A. ^{[1
]}

Plaut, A. S. ^{[1
]}

Henini, M. ^{[2
]}

Pfeiffer, L. N. ^{[3
]}

West, K. W. ^{[3
]}

Nicoll, C. A. ^{[4
]}

Farrer, I. ^{[4
]}

Ritchie, D. A. ^{[4
]}

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, England

[3] Alcatel Lucent, Bell Labs, Murray Hill, NJ 07974 USA

[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 04期

关键词：

Spintronics; Anomalous hall effect; Optically induced spin polarisation; Spin hall effect;

D O I：

10.1016/j.physe.2009.12.013

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have measured the intrinsic photoinduced anomalous Hall effect (PI-AHE) in very high mobility two-dimensional hole gases. In this new effect, similarly to both the spin and anomalous Hall effects, carriers with different spins are deflected to opposite sides of the sample by the spin-orbit interaction, thereby producing in this case a photoinduced voltage transverse to the applied current. We have been able to measure the intrinsic PI-AHE in finite magnetic field in symmetrically and asymmetrically doped (3 1 1)-grown quantum wells but not in (1 0 0)-grown wells. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：940 / 943

页数：4

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