Semi analytical model for electrical transport in single wall carbon nanotube thin film transistors

With the recent advances in carbon nanotube (CNT) electronics, transistors made of thin films of single wall CNTs (SWNTs) are gaining great attention due to their high quality electrical characteristics. With such improvements it has become essential to develop suitable models to accurately predict the electrical transport in such devices which in the current scenario remains scarce. This work presents a numerical simulation of current transport in SWNT thin film-based transistors (TFTs). The developed model considers both Ohmic and Schottky type contacts that are exhibited by such field effect transistors based on which two separate modes of transport for electrons and holes are described. The electron transport is described through a tunneling transmission process while the hole transport is described by a thermionic transmission process where the model treats each SWNT individualistically and determines the overall current through a novel iterative process. The accuracy of the proposed model is verified by comparing it with multiple experimental data.