Analysis of the degradation of single-crystalline silicon modules after 21 years of operation

被引：26

作者：

Piliougine, Michel ^{[1
]}

Oukaja, Amal ^{[2
]}

Sanchez-Friera, Paula ^{[3
]}

Petrone, Giovanni ^{[1
]}

Sanchez-Pacheco, Francisco Jose ^{[4
]}

Spagnuolo, Giovanni ^{[1
]}

Sidrach-de-Cardona, Mariano ^{[5
]}

机构：

[1] Univ Salerno, Dipartimento Ingn Informaz Elettr & Matemat Aplic, Via Giovanni Paolo II 132, I-84084 Fisciano, SA, Italy

[2] Univ Int Andalucia, Malaga 29007, Spain

[3] Solar PV Consultancy Serv, Solkeys 33204, Gijon, Spain

[4] Univ Malaga, Dept Tecnol Elect, Malaga 29071, Spain

[5] Univ Malaga, Dept Fis Aplicada 2, Malaga 29071, Spain

来源：

PROGRESS IN PHOTOVOLTAICS | 2021年 / 29卷 / 08期

关键词：

I– V curve correction; outdoor measurement; photovoltaic degradation; temperature coefficient; uncertainty analysis; visual defect; PV MODULES; PHOTOVOLTAIC MODULES; PERFORMANCE;

D O I：

10.1002/pip.3409

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, the results of the analysis of the degradation of a set of single-crystalline silicon modules after 21 years are presented. The comparison of the main electrical parameters and the series and of the shunt resistances measured in 1996 and 2017 is performed, so that the annual degradation rate is evaluated. In addition, a detailed analysis of the parameter uncertainties has been performed in order to determine its impact on the results. A visual inspection of the modules has also been carried out in order to show the correlation with the variation of the electrical performance. Finally, the temperature coefficients of the degraded modules have been estimated and compared with the nominal ones. The results shown in the paper reveal that the mean annual degradation rate in terms of power is close to 0.9%.

引用

页码：907 / 919

页数：13

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