LDMOSFET and SiGe:C HBT integrated in a 0.25μm BiCMOS technology for RF-PA applications.

被引：4

作者：

Muller, D ^{[1
]}

Giry, A ^{[1
]}

Arnaud, C ^{[1
]}

Arricastres, C ^{[1
]}

Sommet, R ^{[1
]}

Szelag, B ^{[1
]}

Monroy, A ^{[1
]}

Pache, D ^{[1
]}

机构：

[1] STMicroelect, Ctr Commun Microelect Crolles, F-38921 Crolles, France

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

10.1109/BIPOL.2004.1365771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optimized LDMOSFET and a SiGe:C HBT for PA design integrated in a BiCMOS technology are described in this article. Each device interest for PA application is highlighted via their electrical performances -static, small and large signal-.

引用

页码：168 / 171

页数：4