Anomalous photoluminescence of InAs quantum dots implanted by Mn ions

被引：4

作者：

Hu, L. J. ^{[1
]}

Chen, Y. H. ^{[1
]}

Ye, X. L. ^{[1
]}

Huang, X. Q. ^{[1
]}

Liang, L. Y. ^{[1
]}

Ding, F. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 36卷 / 02期

基金：

中国国家自然科学基金;

关键词：

photoluminescence; Mn; InAs quantum dot;

D O I：

10.1016/j.physe.2006.11.002

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The photoluminescence (PL) of Mn-implanted quantum dot (QD) samples after rapid annealing is studied. It is found that the blue shift of the PL peak of the QDs, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. This anomaly is probably related to the migration of Mn atoms to the InAs QDs during annealing, which leads to strain relaxation when Mn atoms enter InAs QDs or to the suppression of the inter-diffusion of In and Ga atoms when Mn atoms surround QDs. Both effects will suppress the blue shift of the QD PL peaks. The temperature dependence of the PL intensity of the heavily implanted QDs confirms the existence of defect traps around the QDs. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：221 / 225

页数：5

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