Cu/Low-k TDDB degradation using ultra low-k (ULK) dielectrics

被引：0

作者：

Miura, Noriko ^{[1
]}

Goto, Kinya ^{[1
]}

Hashii, Shinobu ^{[1
]}

Suzumura, Naohito ^{[1
]}

Miyazaki, Hiroshi ^{[1
]}

Matsumoto, Masahiro ^{[1
]}

Matsuura, Masazumi ^{[1
]}

Asai, Koyu ^{[1
]}

机构：

[1] Renesas Technol Corp, Itami, Hyogo 6640005, Japan

来源：

ADVANCED METALLIZATION CONFERENCE 2006 (AMC 2006) | 2007年

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Time-dependent dielectric breakdown (TDDB) characteristics of Cu/ultra low-k (ULK) dielectrics are evaluated using wafer-level and chip-level tests. The TDDB lifetimes of chip-level ULK samples are reduced, especially in test patterns close to the dicing line, when the sample has no under or upper layers except for the test layer. This degradation is reduced by enclosing the Cu/ULK interconnects with a seal ring (SR). Chip-level TDDB lifetime can be improved to as long as that of a wafer-level sample by using the seal ring in conjunction with semi-global (S/G) layers. I-V characteristics of the chip-level test of Cu/ULK samples, which have only the test layer, show that the dominant leakage current is not due to Poole-Frenkel (PF) current. These results suggest that Cu ion drift due to moisture from the damaged ULK SiOC reduces TDDB lifetime. However, it is possible to avoid the moisture absorption by using SR and S/G layers.

引用

页码：481 / 487

页数：7