Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf0.5Zr0.5O2 Films

被引：36

作者：

Mittmann, Terence ^{[1
]}

Szyjka, Thomas ^{[2
]}

Alex, Hsain ^{[4
]}

Istrate, Marian Cosmin ^{[5
]}

Lomenzo, Patrick D. ^{[1
]}

Baumgarten, Lutz ^{[2
]}

Mueller, Martina ^{[3
]}

Jones, Jacob L. ^{[4
]}

Pintilie, Lucian ^{[5
]}

Mikolajick, Thomas ^{[1
,6
]}

Schroeder, Uwe ^{[1
]}

机构：

[1] NaMLab gGmbH, Noethnitzer Str 64a, D-01187 Dresden, Germany

[2] Forschungszentrum Julich, Peter Grunberg Inst PGI 6, D-52425 Julich, Germany

[3] Univ Konstanz, Fachbereich Phys, D-78464 Constance, Germany

[4] North Carolina State Univ, Dept Mat & Sci & Engn, Raleigh, NC 27695 USA

[5] Natl Inst Mat Phys, Magurele 077125, Romania

[6] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2021年 / 15卷 / 05期

基金：

美国国家科学基金会;

关键词：

ferroelectrics; hafnia; hydrogen; HZO; iridium oxide; oxygen vacancies;

D O I：

10.1002/pssr.202100012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film metal-ferroelectric-metal capacitors with an equal mixture of hafnium oxide and zirconium oxide as the ferroelectric material are fabricated using iridium oxide as the electrode material. The influence of the oxygen concentration in the electrodes during crystallization anneal on the ferroelectric properties is characterized by electrical, chemical, and structural methods. Forming gas, O-2, and N-2 annealing atmospheres significantly change the ferroelectric performance. The use of oxygen-deficient electrodes improves the stabilization of the ferroelectric orthorhombic phase and reduces the wake-up effect. It is found that oxygen-rich electrodes supply oxygen during anneal and reduce the amount of oxygen vacancies, but the nonferroelectric monoclinic phase is stabilized with a negative impact on the ferroelectric properties.

引用

页数：8

共 46 条

[1]

Anderson J.R., 1953, T AM I ELECT ENG 1, V71, P395, DOI DOI 10.1109/TCE.1953.6371953

[2]

[Anonymous], 2021, POWDER DIFFRACTION F

[3] Ferroelectricity in hafnium oxide thin films [J].

Boescke, T. S. ;

Mueller, J. ;

Braeuhaus, D. ;

Schroeder, U. ;

Boettger, U. .

APPLIED PHYSICS LETTERS, 2011, 99 (10)

[4] Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors [J].

Buragohain, Pratyush ;

Erickson, Adam ;

Kariuki, Pamenas ;

Mittmann, Terence ;

Richter, Claudia ;

Lomenzo, Patrick D. ;

Lu, Haidong ;

Schenk, Tony ;

Mikolajick, Thomas ;

Schroeder, Uwe ;

Gruverman, Alexei .

ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (38) :35115-35121

[5] Effect of growth conditions on surface morphology and photoelectric work function characteristics of iridium oxide thin films [J].

Chalamala, BR ;

Wei, Y ;

Reuss, RH ;

Aggarwal, S ;

Gnade, BE ;

Ramesh, R ;

Bernhard, JM ;

Sosa, ED ;

Golden, DE .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1394-1396

[6] Recommended values of clean metal surface work functions [J].

Derry, Gregory N. ;

Kern, Megan E. ;

Worth, Eli H. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 33 (06)

[7] Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents [J].

Fengler, Franz P. G. ;

Nigon, Robin ;

Muralt, Paul ;

Grimley, Everett D. ;

Sang, Xiahan ;

Sessi, Violetta ;

Hentschel, Rico ;

LeBeau, James M. ;

Mikolajick, Thomas ;

Schroeder, Uwe .

ADVANCED ELECTRONIC MATERIALS, 2018, 4 (03)

[8]

Fengler FPG, 2016, PROC EUR S-STATE DEV, P369, DOI 10.1109/ESSDERC.2016.7599663

[9] The X-ray photoelectron spectra of Ir, IrO2 and IrCl3 revisited [J].

Freakley, S. J. ;

Ruiz-Esquius, J. ;

Morgan, D. J. .

SURFACE AND INTERFACE ANALYSIS, 2017, 49 (08) :794-799

[10]

Frey, 2011, J APPL PHYS, V110

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