Exciton binding energy in type II quantum dots

被引：8

作者：

Gomes, P. F. ^{[1
]}

Godoy, M. P. F. ^{[1
]}

Veloso, A. B. ^{[1
]}

Nakaema, M. K. K. ^{[1
]}

Iikawa, F. ^{[1
]}

Brasil, M. J. S. P. ^{[1
]}

Bortoleto, J. R. R. ^{[1
]}

Cotta, M. A. ^{[1
]}

Madureira, J. R. ^{[2
]}

机构：

[1] Univ Estadual Campinas, Inst Fis, CP 6165, BR-13083970 Campinas, SP, Brazil

[2] Ctr Int Fis Mat Condensada, BR-70904970 Brasilia, DF, Brazil

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2 | 2007年 / 4卷 / 02期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1002/pssc.200673217

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the optical properties of self-assembled InP/GaAs quantum dots using continuous-wave and time-resolved photoluminescence spectroscopy. The thermal activation energy, which is directly related to the exciton binding energy in this system, was obtained by photoluminescence measurements as a function of temperature. We obtained thermal activation energies of 6-9 meV for undoped quantum dots and 13 meV for the modulation-doped sample. Those values are in good agreement with calculated results. The dots presented a recombination time of similar to 0.8-1.1 ns, which is surprisingly small for a type-II system.

引用

页码：385 / +

页数：2

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