Neuronal ion-channel dynamics in silicon

被引:0
|
作者
Hynna, Kai M. [1 ]
Boahen, Kwabena [1 ]
机构
[1] Univ Penn, Dept Bioengn, Philadelphia, PA 19104 USA
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We present a simple silicon circuit for modelling voltage-dependent ion channels found within neural cells, capturing both the gating particle's sigmoidal activation (or inactivation) and the bell-shaped time constant In its simplest form, our ion-channel analog consists of two MOS transistors and a unity-gain inverter. We present equations describing its nonlinear dynamics and measurements from a chip fabricated in a 0.25 mu m CMOS process. The channel analog's simplicity allows tens of thousands to be built on a single chip, facilitating the implementation of biologically realistic models of neural computation.
引用
收藏
页码:3614 / +
页数:2
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