Characteristics of cell latch and leakage current at standby state in 6-T low-power static random access memory (SRAM) device

被引:1
作者
Seo, SH [1 ]
Yang, WS [1 ]
Kim, SG [1 ]
Kim, KT [1 ]
机构
[1] Samsung Elect Co Ltd, Memory Div, SRAMI Team, Yongin 449711, Gyungki Do, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 2B期
关键词
0.12-mu m low-power SRAM; standby current; cell latch;
D O I
10.1143/JJAP.42.L151
中图分类号
O59 [应用物理学];
学科分类号
摘要
The standby current at device off-state is investigated against the measuring mode in 6-T and low-power static random access memory (SRAM) device with short gate length of 0.12 mum and high density of 32 M-bit. It can be found that there is the difference of the standby currents between initial and DO modes and this discrepancy in the standby current is closely related to the leakage current of cell n-type metal-oxide semiconductor field-effect transistor (NMOSFET), especially pull-down transistor. This discrepancy in the standby currents among the measuring modes can be explained with the characteristic of the cell latch using its dependence on the leakage current of pull-down transistor and it will be shown that the cell spontaneously moves to minimize the standby current.
引用
收藏
页码:L151 / L153
页数:3
相关论文
共 1 条
  • [1] KIM SB, 2001, IEDM, P253