Performances of phase-change recording disks based on GaSbTe media

被引：23

作者：

Lee, CM

Yen, WS

Chen, JP

Chin, TS

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu 310, Taiwan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 02期

关键词：

chalcogenide; dynamic testing; Ga-Sb-Te; optical disk; phase change;

D O I：

10.1109/TMAG.2004.842036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phase-change optical disks with novel GaSbTe recording media were prepared in the DVD+RW format and evaluated by a dynamic tester at 1X speed. The studied compositions locate along the Sb7Te3-GaSb and Sb2Te3-GaSb pseudo-binary tielines. The disks were prepared by an RF co-sputtering method. Enhanced recrystallization has been demonstrated in the disks with Sb7Te3 -rich recording layer. An approximated composition Ga2Sb5Te3 even exhibited a nearly complete erasure (CNR similar to 45 dB, de erasability similar to -40 dB). Relationship between the dynamic characteristics and crystal structure of the GaSbTe materials has been proposed.

引用

页码：1022 / 1024

页数：3

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