XPS and XTEM study of A1N formation by N2+ implantation of aluminium

被引：38

作者：

Osterle, W ^{[1
]}

Dorfel, I

Urban, I

Reier, T

Schultze, JW

机构：

[1] Bundesanstalt Mat Forsch & Prufung, D-12205 Berlin, Germany

[2] Univ Dusseldorf, Inst Phys Chem & Elektrochem, D-40225 Dusseldorf, Germany

来源：

SURFACE & COATINGS TECHNOLOGY | 1998年 / 102卷 / 1-2期

关键词：

AlN; aluminium; N-2(+) implantation; XPS; XTEM;

D O I：

10.1016/S0257-8972(98)00355-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

X-ray photoelectron spectroscopy (XPS) and cross-sectional transmission electron microscopy (XTEM) were used to study the formation of AlN films by N-2(+) ion implantation of aluminium at energies of 3 keV and 100 keV. In both cases, a two-stage mechanism was found, comprising first the oriented precipitation of small particles of the hexagonal AlN-phase. followed by growth and coalescence finally forming a continuous AlN-layer while increasing the implantation dose from 1 x 10(17) cm(-2) to 2 x 10(17) cm(-2). The results of both methods are in excellent agreement and furthermore provide complementary information concerning chemical composition and binding energies as well as microstructural details. (C) 1998 Elsevier Science S.A.

引用

页码：168 / 174

页数：7

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