Reversal-mechanism of perpendicular switching induced by an in-plane current

被引：7
作者：
Bi, Chong [1 ]
Liu, Ming [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2015年 / 381卷
基金：
中国博士后科学基金;
关键词：
DOMAIN-WALLS; SPIN-TORQUE;
D O I：
10.1016/j.jmmm.2015.01.010
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly from the Rashba or spin Hall effects, we suggest that this type of switching arises from the current-induced chirality dependent domain wall motion. By measuring the field dependent switching behaviors, we show that such switching can also be achieved between any two multidomain states, and all of these switching behaviors can be well explained by this model. This model indicates that the spin Hall angle in such structures may be overestimated and also predicts similar switching behaviors in other ferromagnetic structures with chiral domain walls or skyrmions. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：258 / 262
页数：5
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