Investigation of VO2 Thin Film Grown on III-Nitride Epitaxial Layer

被引:0
|
作者
Azad, Samee [1 ]
Singh, Rahul [1 ]
Munna, Mohiuddin [2 ]
Bayram, Ferhat [1 ]
Khan, Digangana [1 ]
Li, Hongmei [3 ]
Koley, Goutam [1 ]
机构
[1] Clemson Univ, Holcombe Dept Elect & Comp Engn, Clemson, SC 29634 USA
[2] Marquette Univ, Dept Elect & Comp Engn, 1250 W Wisconsin Ave, Milwaukee, WI 53233 USA
[3] Texas Instruments Inc, Dallas, TX 75243 USA
来源
20TH IEEE INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE NANO 2020) | 2020年
基金
美国国家科学基金会;
关键词
VO2; metal insulator transition; resistance transition ratio; piezoelectricity; polycrystalline thin film;
D O I
10.1109/nano47656.2020.9183713
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
VO2 film was incorporated with GaN microcantilevers, and proved to be highly sensitive detector to detect acoustic waves at resonance frequency, but the VO2 film was not of very high quality. In order to produce high quality VO2 mesa to be used for microcantilevers, VO2 thin films were synthesized using low pressure chemical vapor deposition technique (LPCVD) on AlGaN/GaN epitaxial layer on Si (111) substrate, and characterized using X-ray diffraction (XRD) and atomic force microscopy (AFM) to determine their material quality. Electrical and optical imaging methods were also used as characterization methods to determine the changes in properties due to the metal-insulator transition (MIT) of VO2. Resistance transition ratio before and after MIT transition was found to be > 1100, which indicates high quality of the material, suitable for a variety of sensing applications. Optical images taken before, during and after transition clearly indicate reflectivity changes caused by the MIT transition.
引用
收藏
页码:315 / 318
页数:4
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