Spin-polarized magnetic tunnelling magnetoresistive effects in various junctions

被引：19

作者：

Miyazaki, T ^{[1
]}

Tezuka, N ^{[1
]}

Kumagai, S ^{[1
]}

Ando, Y ^{[1
]}

Kubota, H ^{[1
]}

Murai, J ^{[1
]}

Watabe, T ^{[1
]}

Yokota, M ^{[1
]}

机构：

[1] Tohoku Univ, Fac Engn, Dept Appl Phys, Sendai, Miyagi 98077, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1998年 / 31卷 / 06期

关键词：

D O I：

10.1088/0022-3727/31/6/009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recent progress concerning spin-polarized magnetic tunnelling effects for (i) trilayer standard ferromagnet (F)/insulator (I)/ferromagnet (F) junctions, (ii) spin-valve-type junctions, (iii) trilayer or multilayer ferromagnet/granular/ferromagnet junctions and (iv) F/I/F junction with a 'wedge-geometry' insulator is reviewed. Special emphasis is placed on the dependence of the tunnel magnetoresistance ratio on temperature and also the intensity of the applied voltage. It was found that the resistiance for the saturation magnetization state, R-S, and the tunnelling magnetoresistance ratio, TMR, of an Fe/Al(2)O3/Fe junction decreased rapidly with increasing temperature, whereas those of a NiFe/Al2O3/Co junction were insensitive to temperature. Concerning the bias voltage dependence of Rs and TMR, the same tendency with temperature was observed for Fe/Al2O3/Fe and NiFe/Al2O3/Co junctions. Spin-valve-type junction exchange biased by a FeMn layer exhibits a relatively large TMR ratio up to about 400 K.

引用

页码：630 / 636

页数：7

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