Photoelectron scattering in a p-GaN(Cs,O) photocathode

被引：2

作者：

Rozhkov, S. A. ^{[1
,2
]}

Bakin, V. V. ^{[1
]}

Kosolobov, S. N. ^{[1
]}

Scheibler, H. E. ^{[1
,2
]}

Terekhov, A. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, 13 Lavrentieva Ave, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, 2 Pirogova Str, Novosibirsk 630090, Russia

来源：

19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2018年 / 993卷

基金：

俄罗斯基础研究基金会;

关键词：

ELECTRON; BAND; GAN;

D O I：

10.1088/1742-6596/993/1/012027

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoelectron scattering in a p-GaN(Cs,O) photocathode was studied by photoelectron emission spectroscopy at low temperatures. It has been experimentally established that the transfer of photoelectrons from the bulk of a p-GaN(Cs,O) photocathode to vacuum is accompanied by the emission of a cascade of optical phonons in the bulk and at the GaN-vacuum interface. Based on how the high-energy features of the photoelectron energy distribution shift with the photon energy, we find m(hh)/m(0) = 2.3 +/- 0.3.

引用

页数：7

共 18 条

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