Unveiling Roles of Tin Fluoride Additives in High-Efficiency Low-Bandgap Mixed Tin-Lead Perovskite Solar Cells

被引:166
作者
Chen, Qiyu [1 ]
Luo, Jincheng [1 ]
He, Rui [1 ]
Lai, Huagui [2 ]
Ren, Shengqiang [1 ]
Jiang, Yiting [1 ]
Wan, Zhenxi [1 ]
Wang, Wenwu [1 ]
Hao, Xia [3 ]
Wang, Ye [4 ]
Zhang, Jingquan [1 ]
Constantinou, Iordania [5 ,6 ]
Wang, Changlei [7 ,8 ,9 ]
Wu, Lili [1 ]
Fu, Fan [2 ]
Zhao, Dewei [1 ]
机构
[1] Sichuan Univ, Minist Educ, Coll Mat Sci & Engn, Engn Res Ctr Alternat Energy Mat & Devices, Chengdu 610065, Sichuan, Peoples R China
[2] Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, Ueberlandstr 129, CH-8600 Dubendorf, Switzerland
[3] Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Sichuan, Peoples R China
[4] Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Zhengzhou 450052, Henan, Peoples R China
[5] Tech Univ Carolo Wilhelmina Braunschweig, Inst Microtechnol IMT, D-38124 Braunschweig, Germany
[6] Tech Univ Carolo Wilhelmina Braunschweig, Ctr Pharmaceut Engn PVZ, D-38124 Braunschweig, Germany
[7] Soochow Univ, Educ Minist China, Sch Optoelect Sci & Engn, Suzhou 215006, Peoples R China
[8] Soochow Univ, Educ Minist China, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Key Lab Adv Opt Mfg Technol Jiangsu Prov, Suzhou 215006, Peoples R China
[9] Soochow Univ, Educ Minist China, Key Lab Modern Opt Technol, Suzhou 215006, Peoples R China
基金
中国国家自然科学基金;
关键词
low-bandgap perovskites; mixed Sn; -Pb; perovskite solar cells; Sn; (2+) oxidation; topological growth; FREE HALIDE PEROVSKITE; CARRIER LIFETIMES; GAP; SN; RECOMBINATION; STABILITY;
D O I
10.1002/aenm.202101045
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Low-bandgap mixed tin-lead perovskite solar cells (PSCs) have been attracting increasing interest due to their appropriate bandgaps and promising application to build efficient all-perovskite tandem cells, an effective way to break the Shockley-Queisser limit of single-junction cells. Tin fluoride (SnF2) has been widely used as a basis along with various strategies to improve the optoelectronic properties of low-bandgap Sn-Pb perovskites and efficient cells. However, fully understanding the roles of SnF2 in both films and devices is still lacking and fundamentally desired. Here, the functions of SnF2 in both low-bandgap (FASnI(3))(0.6)(MAPbI(3))(0.4) perovskite films and efficient devices are unveiled. SnF2 regulates the growth mode of low-bandgap Sn-Pb perovskite films, leading to highly oriented topological growth and improved crystallinity. Meanwhile, SnF2 prevents the oxidation of Sn2+ to Sn4+ and reduces Sn vacancies, leading to reduced background hole density and defects, and improved carrier lifetime, thus largely decreasing nonradiative recombination. Additionally, the F- ion preferentially accumulates at hole transport layer/perovskite interface with high SnF2 content, leading to more defects. This work provides in-depth insights into the roles of SnF2 additives in low-bandgap Sn-Pb films and devices, assisting in further investigations into multiple additives and approaches to obtain efficient low-bandgap PSCs.
引用
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页数:10
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