Influence of anodic passivation on electrical characteristics of Al/p-Si/Al and Al/V2O5/p-Si/Al diodes

In this paper, the V2O5 thin film has been grown on the both p-type semiconductor and glass substrate by the spray pyrolysis method. For optical and structural properties of thin film, the optical absorption, SEM, AFM and XRD measurements have been done. It is observed that films exhibit polycrystalline behavior. The effects of anodic passivation on the characteristic parameters of diodes have been investigated using current-voltage (I-V) characteristics. The I-V measurements of the diodes have been performed at the room temperature in the dark. The main electrical parameters such as ideality factor (n) and barrier height (Phi(b)) of diodes have been calculated from the forward bias I-V characteristics. Likewise, the values of series resistance (R-s) of diodes have been obtained from Norde method. It is observed that while the ideality factor decreases with anodic passivation, the barrier height increases.