Mechanical responses of single-crystal ZnO

被引:19
作者
Jian, Sheng-Rui [1 ]
机构
[1] I Shou Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan
关键词
ZnO; Nanoindentation; Cathodoluminescence; Focused ion beam; Cross-sectional transmission electron microscopy; GAN THIN-FILMS; BERKOVICH NANOINDENTATION; DEFORMATION MECHANISMS; SPHERICAL INDENTATION; MICROSCOPY; HARDNESS; MODULUS; BULK; SI;
D O I
10.1016/j.jallcom.2009.11.142
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Berkovich nanoindentation-induced deformation in single-crystal ZnO was investigated by using cathodoluminescence (CL) imaging and cross-sectional transmission electron microscopy (XTEM) techniques. The load-displacement curves exhibit the clear features of multiple "pop-ins", albeit somewhat randomly, in the load increasing segment. The XTEM results reveal that the primary plastic deformation is the propagation of dislocations with no evidence of either phase transformation or formation of micro-cracking. The CL images of nanoindentation show the rosette structures typical of the hexagonal system. However, unlike those displayed in similar studies using spherical indenters, the distribution of deformation-induced extended defects/dislocations appears to be more localized for the current Berkovich indentations. Furthermore, the CL spectra recorded at room temperature showed progressive degradation in the near band-edge luminescence intensity with increasing nanoindentation load, indicating severe lattice damages might have occurred. (c) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:214 / 218
页数:5
相关论文
共 30 条
[1]   Electrical characterization of Au/n-ZnO Schottky contacts on n-Si [J].
Aydogan, S. ;
Cinar, K. ;
Asil, H. ;
Coskun, C. ;
Tueruet, A. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 476 (1-2) :913-918
[2]   Non-linear deformation mechanisms during nanoindentation [J].
Bahr, DF ;
Kramer, DE ;
Gerberich, WW .
ACTA MATERIALIA, 1998, 46 (10) :3605-3617
[3]   Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon [J].
Bradby, JE ;
Williams, JS ;
Wong-Leung, J ;
Swain, MV ;
Munroe, P .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3749-3751
[4]   Contact-induced defect propagation in ZnO [J].
Bradby, JE ;
Kucheyev, SO ;
Williams, JS ;
Jagadish, C ;
Swain, MV ;
Munroe, P ;
Phillips, MR .
APPLIED PHYSICS LETTERS, 2002, 80 (24) :4537-4539
[5]   Mechanical deformation of InP and GaAs by spherical indentation [J].
Bradby, JE ;
Williams, JS ;
Wong-Leung, J ;
Swain, MV ;
Munroe, P .
APPLIED PHYSICS LETTERS, 2001, 78 (21) :3235-3237
[6]   Nano-indentation of coatings [J].
Bull, SJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (24) :R393-R413
[7]   Cross-sectional transmission electron microscopy observations on the Berkovich indentation-induced deformation microstructures in GaN thin films [J].
Chien, Chi-Hui ;
Jian, Sheng-Rui ;
Wang, Chung-Ting ;
Juang, Jenh-Yih ;
Huang, J. C. ;
Lai, Yi-Shao .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (13) :3985-3990
[8]   Mechanical properties of ZnO epitaxial layers grown on a- and c-axis sapphire -: art. no. 203105 [J].
Coleman, VA ;
Bradby, JE ;
Jagadish, C ;
Munroe, P ;
Heo, YW ;
Pearton, SJ ;
Norton, DP ;
Inoue, M ;
Yano, M .
APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3
[9]   Elastic-plastic transition during nanoindentation in bulk GaN crystal [J].
Fujikane, Masaki ;
Leszczyski, Michal ;
Nagao, Shijo ;
Nakayama, Tadachika ;
Yamanaka, Shinsuke ;
Niihara, Koichi ;
Nowak, Roman .
JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 450 (1-2) :405-411
[10]   Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer [J].
Huang, Hsin-Hsuan ;
Chu, Sheng-Yuan ;
Kao, Po-Ching ;
Chen, Yung-Chen ;
Yang, Ming-Ru ;
Tseng, Zong-Liang .
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 479 (1-2) :520-524