Transport and band structure studies of crystalline ZnRh2O4

被引：36

作者：

Mansourian-Hadavi, Negar ^{[1
]}

Wansom, Supaporn ^{[1
]}

Perry, Nicola H. ^{[1
]}

Nagaraja, Arpun R. ^{[1
]}

Mason, Thomas O. ^{[1
]}

Ye, Lin-hui ^{[2
]}

Freeman, Arthur J. ^{[2
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 07期

关键词：

AMORPHOUS OXIDE SEMICONDUCTOR; P-N HETEROJUNCTIONS; PLANE-WAVE METHOD; ELECTRONIC-STRUCTURE; FABRICATION; DIODES;

D O I：

10.1103/PhysRevB.81.075112

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the synthesis and characterization of non-d(10) p-type transparent conducting oxides of the normal spinel ZnRh2O4. Undoped ZnRh2O4 was successfully prepared by means of bulk solid-state synthesis. The conduction mechanism and bulk defect chemistry of polycrystalline sintered pellets of ZnRh2O4 were studied through electrical conductivity and Seebeck coefficient measurements, in defect equilibrium at elevated temperature under controlled atmospheres. Optical diffuse reflectance measurements were also carried out to evaluate band gap. The data were analyzed in terms of an activated mobility (small polaron conduction), with a hopping energy of 0.25 eV. Results from band structure calculations by LDA+U and optical band-gap measurement by UV-visible spectrometry are in good agreement with literature data.

引用

页数：6

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