Thermoelectric performance of In and Ga single/dual-doped ZnO ceramics fabricated by spark plasma sintering

被引：8
作者：
Jeong, Ahrong [1 ]
Ohtaki, Michitaka [1 ,2 ]
Jang, Byung-Koog [1 ]
机构：
[1] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan
[2] Kyushu Univ, Transdisciplinary Res & Educ Ctr Green Technol, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan
来源：
CERAMICS INTERNATIONAL | 2022年 / 48卷 / 10期
关键词：
Thermoelectrics; ZnO; Secondary phase; Spark plasma sintering; THERMOPHYSICAL PROPERTIES; ELECTRICAL-PROPERTIES; THERMAL-CONDUCTIVITY; HOMOLOGOUS COMPOUNDS; AL; MICROSTRUCTURE; (ZNO)(5)IN2O3; SUBSTITUTION; IMPROVEMENT; ZNKIN2OK+3;
D O I：
10.1016/j.ceramint.2022.01.334
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In single-doped [Zn(1- y)Iny]O (y = 0.005, 0.01, 0.02, 0.03, 0.05) ceramics and In and Ga dual-doped [Zn(1-x-y)GaxIny]O (y = 0.005; x = 0.005, 0.01, 0.02, 0.03, 0.05) ceramics were prepared using a solid-state reaction and spark plasma sintering at 1423 K in vacuum. The microstructural and chemical composition analyses revealed that Zn7In(2)O(10) and ZnGa2O4 existed as the secondary phases in the single-doped ZnO (y >= 0.02) and dual-doped ZnO (y = 0.005; x >= 0.02) ceramics. Doped (single and dual) ZnO showed a high relative density of 92.5-100% as compared to pure ZnO (91.3%). The dual-doped sample with x = 0.005 and y = 0.005 prepared at 1046 K showed the highest power factor of 1.05 mW K-2 m(-1). The dual-doped ZnO ceramics thereby showed an improved thermoelectric performance, attaining the figure of merit of 0.17 as compared to that of pure ZnO (0.12) at 1046 K.
引用
收藏
页码：14414 / 14423
页数：10
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