Seeded growth of AlN bulk crystals in m- and c-orientation

被引：142
作者：
Lu, P. [1 ]
Collazo, R. [1 ]
Dalmau, R. F. [2 ]
Durkaya, G. [3 ]
Dietz, N. [3 ]
Raghothamachar, B. [4 ]
Dudley, M. [4 ]
Sitar, Z. [1 ]
机构：
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] HexaTech Inc, Morrisville, NC 27560 USA
[3] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[4] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 312卷 / 01期
关键词：
High resolution X-ray diffraction; Substrates; X-ray topography; Growth from vapor; Seeded vapor growth; Nitrides; SINGLE-CRYSTALS; A-PLANE; PHONONS; RAMAN;
D O I：
10.1016/j.jcrysgro.2009.10.008
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Seeded growth of AlN boules was achieved on m-(1 0 (1) over bar 0) and c-(0 0 0 (1) over bar) orientations by physical vapor transport (PVT). The single crystalline m- and c-plane seeds were cut from freestanding AlN single crystals. AlN boules 12 mm in diameter and 7 mm in height were grown at source temperatures around 2280 degrees C in N-2 atmosphere at 500 Torr of total pressure. Under identical process conditions, the m- and c-plane boules exhibited the same growth rates, 150-170 mu m/h, and similar expansion angles, 22-27 degrees, which indicated that the growth was controlled by the thermal profile inside the crucible rather than by crystallographic differences. X-ray rocking curve analysis and Raman spectroscopy confirmed that both m- and c-plane grown crystals possessed high crystalline quality. The dislocation density in both crystals was non-uniform and in the range 10(2)-10(5) cm(-2), as characterized by X-ray topography. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：58 / 63
页数：6
相关论文
共 28 条
[1]   Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN [J].
Bergman, L ;
Dutta, M ;
Balkas, C ;
Davis, RF ;
Christman, JA ;
Alexson, D ;
Nemanich, RJ .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) :3535-3539
[2]   Spontaneous polarization and piezoelectric constants of III-V nitrides [J].
Bernardini, F ;
Fiorentini, V ;
Vanderbilt, D .
PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027
[3]   Orientation-dependent properties of aluminum nitride single crystals [J].
Bickermann, M. ;
Heimann, P. ;
Epelbaum, B. M. .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :1902-1906
[4]   Orientation-dependent phonon observation in single-crystalline aluminum nitride [J].
Bickermann, M ;
Epelbaum, BM ;
Heimann, P ;
Herro, ZG ;
Winnacker, A .
APPLIED PHYSICS LETTERS, 2005, 86 (13) :1-3
[5]   Large-area AlN substrates for electronic applications: An industrial perspective [J].
Bondokov, Robert T. ;
Mueller, Stephan G. ;
Morgan, Kenneth E. ;
Slack, Glen A. ;
Schujman, Sandra ;
Wood, Mark C. ;
Smart, Joseph A. ;
Schowalter, Leo J. .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (17) :4020-4026
[6]   Band-edge exciton states in AlN single crystals and epitaxial layers [J].
Chen, L ;
Skromme, BJ ;
Dalmau, RF ;
Schlesser, R ;
Sitar, Z ;
Chen, C ;
Sun, W ;
Yang, J ;
Khan, MA ;
Nakarmi, ML ;
Lin, JY ;
Jiang, HX .
APPLIED PHYSICS LETTERS, 2004, 85 (19) :4334-4336
[7]   Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire [J].
Craven, MD ;
Lim, SH ;
Wu, F ;
Speck, JS ;
DenBaars, SP .
APPLIED PHYSICS LETTERS, 2002, 81 (03) :469-471
[8]   Advances in Bulk Crystal Growth of AlN and GaN [J].
Ehrentraut, Dirk ;
Sitar, Zlatko .
MRS BULLETIN, 2009, 34 (04) :259-265
[9]   Similarities and differences in sublimation growth of SiC and AlN [J].
Epelbaum, B. M. ;
Bickermann, M. ;
Nagata, S. ;
Heimann, P. ;
Filip, O. ;
Winnacker, A. .
JOURNAL OF CRYSTAL GROWTH, 2007, 305 (02) :317-325
[10]   Development of natural habit of large free-nucleated AlN single crystals [J].
Epelbaum, B. M. ;
Nagata, S. ;
Bickermann, M. ;
Heimann, P. ;
Winnacker, A. .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (06) :1780-1783
123