Characterization of Mn doped ZnO wrinkle-network nanostructured thin films deposited by sol-gel spin coating technique

被引:0
作者
Kamal [1 ]
Dikshit, Ashutosh [2 ]
Singh, Abhishek [2 ]
Prajapati, Yk [1 ]
Chakrabarti, P. [2 ]
机构
[1] Motilal Nehru Natl Inst Technol Allahabad, Dept ECE, Prayagraj 211004, Uttar Pradesh, India
[2] BHU, Indian Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
来源
OXIDE-BASED MATERIALS AND DEVICES X | 2019年 / 10919卷
关键词
Mn doping; Semiconductors; Spin coating; Thin films; Zinc Oxide; ZnO; OPTICAL-PROPERTIES; SEMICONDUCTOR;
D O I
10.1117/12.2525236
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A wrinkle-network structure of Mn doped ZnO is presented in this paper. The undoped and Mn doped ZnO thin film samples have been prepared on ITO coated glass substrates by sol-gel spin coating technique as it is a simple and lowcost method to deposit semiconductor thin films. High resolution X-ray diffraction technique confirms the formation of hexagonal wurtzite structure with diffraction pattern corresponding to ZnO. Mn related phases have not been observed within the detection limit of HR-XRD. The incorporation of Mn dopant in the sample has been confirmed by energy dispersive X-ray spectroscopy (EDS). Both the undoped and Mn doped samples have high optical transmittance in the wavelength range of 300 nm - 800 nm, with a maximum of 88% as recorded by UV-VIS spectroscopy. There is an increase in the bandgap of ZnO thin films by the introduction of Mn dopants which has been calculated by Tauc plot.
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页数:6
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