Study of Electronic States in LaNiO3/SrRuO3 Bilayers: Interface-Induced Magnetism and Charge Transfer

被引:4
作者
Tanguturi, Ranganadha Gopalarao [1 ]
Zhou, Peng [1 ]
Yan, Zhuo [1 ]
Qi, Yajun [1 ]
Xia, Zhengcai [2 ]
Liu, Yong [3 ,4 ]
Xiong, Rui [3 ,4 ]
Guo, Yizhong [5 ]
Wang, Lihua [5 ]
Srinivasan, Gopalan [6 ]
Zhang, Tianjin [1 ]
机构
[1] Hubei Univ, Sch Mat Sci & Engn, Key Lab Green Preparat & Applicat Funct Mat, Hubei Prov Key Lab Polymers,Minist Educ, Wuhan 430062, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430071, Peoples R China
[3] Wuhan Univ, Dept Phys, Minist Educ, Wuhan 430072, Peoples R China
[4] Wuhan Univ, Key Lab Acoust & Photon Mat & Devices, Minist Educ, Wuhan 430072, Peoples R China
[5] Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100022, Peoples R China
[6] Oakland Univ, Phys Dept, Rochester, MI 48309 USA
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2021年 / 258卷 / 08期
基金
中国国家自然科学基金;
关键词
electrical transport; interfacial charge transfer; LaNiO3/SrRuO3; heterostructures; valence band offsets; THIN-FILMS; TRANSPORT-PROPERTIES; SRRUO3; LANIO3-DELTA; ANISOTROPY; BEHAVIOR;
D O I
10.1002/pssb.202000527
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The results of a study on the electronic states and valence band offset (VBO) in heterostructures of the transition metal oxide LaNiO3 (LNO)/SrRuO3 (SRO) grown on (001) SrTiO3 (STO) substrates are reported. X-ray photoelectron spectroscopy (XPS) data reveal the presence of Ni2+ states in LNO layer that can develop a reduced bandwidth of O-2p and Ni-3d. Further analysis of XPS data confirms the presence of a VBO, and the value of VBO is found to be +0.02 eV and -0.38 eV for the bilayers of STO/LaNiO3/SrRuO3 (BL-1) and STO/SrRuO3/LaNiO3 (BL-2), respectively. Distinct signs of VBO are noticed between the bilayers due to the relative shift of the valence band of the top layer with respect to the bottom layer. Such band shifts can lead to the charge transfer across the (3d-4d) interface, which significantly modifies the global electronic transport and magnetic properties of the bilayers. A detailed discussion on the underlying physical phenomena of electrical transport and magnetic responses triggered by the interface is also incorporated herein.
引用
收藏
页数:9
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