Atmospheric pressure chemical vapor deposition of tin nitride thin films using a halide source

被引：21

作者：

Takahashi, N ^{[1
]}

Terada, K ^{[1
]}

Nakamura, T ^{[1
]}

机构：

[1] Shizuoka Univ, Fac Engn, Dept Mat Sci & Technol, Shizuoka 4328561, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2000年 / 10卷 / 12期

关键词：

D O I：

10.1039/b005032f

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Preparation of SnNx films has been studied by atmospheric pressure chemical vapor deposition using SnCl2 and NH3 as starting materials. The films were deposited onto a quartz substrate at 550-675 degreesC with growth rates of 0.1-2.5 mum h(-1). They showed a typical X-ray diffraction pattern for SnNx with a hxagonal structure. The band-gap was estimated to be 2.05 eV from the transmission spectra. The electron probe X-ray microanalysis showed that the N/Sn ratio of the as-deposited films was 0.73-1.10, which was dependent upon the growth temperature. They were conductive with resistivities of 0.3-10 Omega cm. The electrochromism was observed when +/-1.0 V (SCE) potentials were applied to the SnNx films in a 1.0 M Na2SO4 electrolyte solution.

引用

页码：2835 / 2837

页数：3

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