Thermoelectric power, magnetoresistance of lead chalcogenides in the region of phase transitions under pressure

被引：58

作者：

Shchennikov, VV ^{[1
]}

Ovsyannikov, SV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Met Phys, Urals Div, High Pressure Grp, Ekaterinburg 620219, Russia

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 126卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

semiconductors; electronic transport; galvanomagnetic effects; phase transitions; high pressure;

D O I：

10.1016/S0038-1098(03)00210-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The longitudinal and transverse thermomagnetic Nernst-Ettingshausen (N-E) effects were measured at ultrahigh pressure up to 20 GPa under closure of semiconductor gap at NaCl- and GeS-type phases of n-PbTe, p-PbSe and p-PbS. Near similar to 3 GPa, the maxima of N-E effects and magnetoresistance (and hence of mobility of charge carriers) attributed to gapless state for PbTe and PbSe were established. The reversible sign inversion of transverse N-E effect indicating the change in scattering mechanism of charge carries have been revealed at high pressure phase of PbSe. The lowering of thermomagnetic effects with pressure gave the evidence of indirect semiconductor gap at high pressure GeS-type phases in contrary to NaCl-phases. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：373 / 378

页数：6

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