Influence of substrate temperature on incorporation of magnesium into Zn1-xMgxO layers growth by molecular beam epitaxy

被引：3
|
作者：
Jarosz, D. [1 ]
Teisseyre, H. [1 ,2 ]
Stachowicz, M. [1 ]
Pieniazek, A. [1 ]
Kret, S. [1 ]
Domagala, J. Z. [1 ]
Kozanecki, A. [1 ]
机构：
[1] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 766卷
关键词：
Substrate temperature; Photoluminescence; Magnesium composition; Zinc oxide; Epilayer; A-PLANE SAPPHIRE; THIN-FILMS; ZNO; EPILAYERS; ELEMENTS;
D O I：
10.1016/j.jallcom.2018.07.014
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Plasma-assisted molecular beam epitaxy growth of ZnO and Zn1-xMgxO epilayers on Al2O3 (11-20) substrates is described. The influence of the substrate temperature on the growth rate and magnesium concentration in Zn1-xMgxO epilayers was studied in detail. It was found that the composition of magnesium in Zn1-xMgxO epilayers increased with increasing substrate temperature. The composition variation in the alloys as a function of the growth temperature could be explained by the difference of vapor pressure of Mg and Zn at high growth temperature. Theoretical approaches to surface evaporation of metal atoms under different growth condition are difficult. Here, we describe an uncomplicated method determine quantities experimental to obtain. These results can be extended to other types of ternary or quaternary materials grown by MBE technique. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：398 / 401
页数：4
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