Zinc oxide (ZnO) films have been prepared by electrodeposition from aqueous solutions of Zn(NO3)(2) center dot 6H(2)O on indium tin oxide substrates applying both classical and modified methods. In the modified method, two coils were placed reciprocally outside of deposition bath. The coils were connected to an alternative current power supply. The energy band gaps of the films obtained by the classical method were found to be between 3.32 and 3.38 eV, while those of the films obtained by the modified method were found to be between 3.74 and 3.77 eV. The structures of the films were characterized by X-ray diffractometer (XRD). The XRD patterns showed that all of the films had a hexagonal grain structure. In addition, it was calculated by XRD results that the crystallite sizes of the films were between 29 and 59 nm. It was concluded from the film thicknesses that the reaction rate was decreased approximately in half due to the magnetic field. The morphological characteristic of the ZnO films was studied with a scanning electron microscope. It was seen that the nanorods filled the surfaces of the films obtained by the classical method densely. However, the nanorods on the surfaces of the films obtained by the modified method formed much sparsely.
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Univ Nacl Mar del Plata, Fac Ingn, INTEMA, Div Corros, Mar Del Plata, Buenos Aires, ArgentinaUniv Nacl Mar del Plata, Fac Ingn, INTEMA, Div Corros, Mar Del Plata, Buenos Aires, Argentina
Berruet, M.
Vazquez, M.
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Univ Nacl Mar del Plata, Fac Ingn, INTEMA, Div Corros, Mar Del Plata, Buenos Aires, ArgentinaUniv Nacl Mar del Plata, Fac Ingn, INTEMA, Div Corros, Mar Del Plata, Buenos Aires, Argentina
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Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Fang, F.
Ng, A. M. C.
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Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Ng, A. M. C.
Chen, X. Y.
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Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Chen, X. Y.
Djurisic, A. B.
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Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Djurisic, A. B.
Zhong, Y. C.
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Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Zhong, Y. C.
Wong, K. S.
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Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Wong, K. S.
Fong, P. W. K.
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Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Fong, P. W. K.
Lui, H. F.
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Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Lui, H. F.
Surya, C.
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Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Surya, C.
Chan, W. K.
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Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
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Univ Nacl Mar del Plata, Fac Ingn, INTEMA, Div Corros, Mar Del Plata, Buenos Aires, ArgentinaUniv Nacl Mar del Plata, Fac Ingn, INTEMA, Div Corros, Mar Del Plata, Buenos Aires, Argentina
Berruet, M.
Vazquez, M.
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Univ Nacl Mar del Plata, Fac Ingn, INTEMA, Div Corros, Mar Del Plata, Buenos Aires, ArgentinaUniv Nacl Mar del Plata, Fac Ingn, INTEMA, Div Corros, Mar Del Plata, Buenos Aires, Argentina
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Fang, F.
Ng, A. M. C.
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Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Ng, A. M. C.
Chen, X. Y.
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Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Chen, X. Y.
Djurisic, A. B.
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Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Djurisic, A. B.
Zhong, Y. C.
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Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Zhong, Y. C.
Wong, K. S.
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Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Wong, K. S.
Fong, P. W. K.
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Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Fong, P. W. K.
Lui, H. F.
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Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Lui, H. F.
Surya, C.
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Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Surya, C.
Chan, W. K.
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Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China