Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films

被引:49
作者
Guo, Daoyou [1 ,2 ,3 ]
An, Yuehua [1 ,2 ]
Cui, Wei [1 ,2 ]
Zhi, Yusong [3 ]
Zhao, Xiaolong [1 ,2 ]
Lei, Ming [1 ,2 ]
Li, Linghong [4 ]
Li, Peigang [1 ,3 ]
Wu, Zhenping [1 ,2 ]
Tang, Weihua [1 ,2 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Sci, Lab Optoelect Mat & Devices, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[3] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Zhejiang, Peoples R China
[4] SUNY Coll Potsdam, Dept Phys, Potsdam, NY 13676 USA
来源
SCIENTIFIC REPORTS | 2016年 / 6卷
基金
中国国家自然科学基金; 北京市自然科学基金;
关键词
TEMPERATURE FERROMAGNETISM; IRON-OXIDE; ENHANCEMENT; FE2+;
D O I
10.1038/srep25166
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)(2)O-3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of (201) crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What's more, the Ga2O3/(Ga1-xFex)(2)O-3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.
引用
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页数:7
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