An asymmetric dual gate poly-si TFTs for improving hot carrier stress stability and kink effect suppression

被引：0

作者：

Park, Joong Hyun ^{[1
]}

Nam, Woo Jin ^{[1
]}

Lee, Jae Hoon ^{[1
]}

Han, Min Koo ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006 | 2007年 / 910卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An asymmetric dual gate poly-Si thin film transistor (TFT), which consists of a long-gate TFT and a short-gate TFT, was fabricated in order to suppress the kink current and increase the reliability under the electrical stress. The asymmetric dual-gate does not exhibit the kink current in a high drain bias because the long-gate TFT operates in the linear regime and limits the total current. The asymmetric dual-gate structure improves kink-free characteristics compared with single and symmetric dual-gate TFT. The hot-carrier stress reliability is successfully improved due to kink current suppression.

引用

页码：609 / 614

页数：6

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