Growth of CuIn3Se5 layer on the CuInSe2 film and its effect on the photovoltaic properties of In2Se3/CuInSe2 solar cells

被引：0

作者：

Kwon, SH ^{[1
]}

Park, SC ^{[1
]}

Ahn, BT ^{[1
]}

Yoon, KH ^{[1
]}

Song, J ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Yusung Gu, Taejon 305701, South Korea

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The growth of CuIn3Se5 layer on CuInSe2 films has been studied for the fabrication of CuInSe2 solar cell, using the three-stage process. After growing the CuInSe2 film, the film surface was quickly converted to a possible ordered vacancy compound (CuIn3Se2). AES depth analysis indicated the presence of a CuIn3Se2 layer on the CuIn3Se5 surface. The energy bandgap shifted from 1.04 to 1.24 eV by the formation of CuIn3Se2 phase on CuInSe2 surface. Because the lattice parameters of CuInaSes are smaller, the XRD peaks were shifted to higher 2 theta values. In2Se3/CuInSe2 cells with a thin CuIn3Se2 layer at the interface yielded solar efficiency of 8.46% with an active area of 0.2 cm(2). The device fabricated from the films with a thick CuIn3Se2 layer on CuInSe2 film displayed a double diode effect which was possibly caused the increase of junction interface.

引用

页码：395 / 398

页数：4