Lanthanide-based emitting materials in light-emitting diodes

被引:431
作者
de Bettencourt-Dias, Ana [1 ]
机构
[1] Univ Nevada, Dept Chem, Reno, NV 89557 USA
关键词
D O I
10.1039/b702341c
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Since the description of efficient electroluminescence from aluminium tris(hydroxyquinoline) in the mid 1980s, interest in new complexes and polymers with luminescence properties as emitting layers in light-emitting diodes has steadily increased. Recently, Ln(III) ion complexes have gained in importance for this type of application. Here we review some of the seminal work in the area, along with new developments in the. field. The photophysical characterization of complexes of lanthanide ions both in solution and in the solid state allows the determination of which of the complexes might be successfully utilized as emitting layers in light-emitting diodes for display applications. However, the architecture of the device is also of major importance, to allow for good charge transport and recombination and thus obtain pure colors and high emission quantum efficiency.
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收藏
页码:2229 / 2241
页数:13
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