Electrical properties of Pb(Zr,Ti)O-3 thin films on Ir and IrO2 electrodes by MOCVD

被引：0
|
作者：
Shimizu, M
Okino, H
Fujisawa, H
Shiosaki, T
机构：
来源：
ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical properties of PZT thin films grown by MOCVD on Pt, Ir, IrO2 and Ir/IrO2 bottom electrodes, and the effects of various top electrode materials on the electrical properties of these PZT films, were investigated. Regardless of the top electrode materials, PZT films prepared on Ir, IrO2 and Ir/IrO2 showed a smaller dielectric constant and Pr, and showed larger Pc than those of PZT films on both Pt top and bottom electrode. Ir/IrO2/PZT/IrO2/Ir/SiO2/Si capacitors showed no fatigue up to a switching cycle of 10(11) and showed a leakage current density of 10(-7) A/cm(2) at 3V.
引用
收藏
页码：471 / 474
页数：4
相关论文
共 50 条
  • [21] Preparation of IrO2 thin films by MOCVD by using Ir(EtCp)(CHD)
    Fujisawa, H
    Shimizu, M
    Niu, H
    Watari, S
    Oshima, N
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 46 (01) : 176 - 179
  • [22] Effects of the purity of metalorganic sources on the electrical properties of Pb(Zr,Ti)O3 thin films by MOCVD
    Shimizu, M
    Yoshida, M
    Fujisawa, H
    Niu, H
    FERROELECTRIC THIN FILMS VII, 1999, 541 : 411 - 416
  • [23] Effects of La and Nb modification on the electrical properties of Pb(Zr,Ti)O3 thin films by MOCVD
    Himeji Inst of Technology, Hyogo, Japan
    Integr Ferroelectr, 1 -4 pt 1 (69-75):
  • [24] The microstructure of Pb(Zr,Ti)O-3 and Pb(Zr, Ti)O-3/YBa2Cu3O7 films
    Cao, LX
    Xu, Y
    Zhao, BR
    Guo, LP
    Liu, JZ
    Xu, B
    Wu, F
    Li, L
    Zhao, ZX
    Zhu, AJ
    Mai, ZH
    Zhao, JH
    Fu, YF
    Li, XJ
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1996, 9 (04): : 310 - 314
  • [25] THE INFLUENCE OF SOL SYNTHESIS CONDITIONS ON THE ELECTRICAL-PROPERTIES OF PB(ZR,TI)O-3 THIN-FILMS
    TU, YL
    MILNE, SJ
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1995, 14 (12) : 885 - 888
  • [26] PT(PbTiO3) buffer layer effects on the electrical properties of Pb(Zr,Ti)O-3 thin films
    Cho, NH
    Kim, HG
    MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 243 - 246
  • [27] Fatigue of piezoelectric properties in Pb(Zr,Ti)O-3 films
    Kholkin, AL
    Colla, EL
    Tagantsev, AK
    Taylor, DV
    Setter, N
    APPLIED PHYSICS LETTERS, 1996, 68 (18) : 2577 - 2579
  • [28] Investigation into electrical conduction mechanisms of Pb(Zr,Ti)O3 thin-film capacitors with Pt, IrO2 and SrRuO3 top electrodes
    Masuda, Y
    Nozaka, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (9B): : 6576 - 6580
  • [29] Preparation and pyroelectric properties of (Pb, La)(Zr, Ti)O-3 (PLZT) thin films
    Kobune, M
    Fujii, S
    Takayama, R
    Tomozawa, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B): : 4980 - 4983
  • [30] Effects of the purity of Ti source precursor on the electrical properties of Pb(Zr,Ti)O3 thin films prepared by MOCVD
    Shimizu, M
    Yoshida, M
    Fujisawa, H
    Niu, H
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S1529 - S1531
12345