Electrical properties of Pb(Zr,Ti)O-3 thin films on Ir and IrO2 electrodes by MOCVD

被引：0
|
作者：
Shimizu, M
Okino, H
Fujisawa, H
Shiosaki, T
机构：
来源：
ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical properties of PZT thin films grown by MOCVD on Pt, Ir, IrO2 and Ir/IrO2 bottom electrodes, and the effects of various top electrode materials on the electrical properties of these PZT films, were investigated. Regardless of the top electrode materials, PZT films prepared on Ir, IrO2 and Ir/IrO2 showed a smaller dielectric constant and Pr, and showed larger Pc than those of PZT films on both Pt top and bottom electrode. Ir/IrO2/PZT/IrO2/Ir/SiO2/Si capacitors showed no fatigue up to a switching cycle of 10(11) and showed a leakage current density of 10(-7) A/cm(2) at 3V.
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页码：471 / 474
页数：4
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