Dielectric properties of nanocrystalline barium titanate thin films deposited by RF magnetron sputtering

被引:16
作者
Hsi, CS
Hsiao, FY
Wu, NC
Wang, MC
机构
[1] I Show Univ, Dept Mat Engn, Kaohsiung, Taiwan
[2] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
[3] Natl Kaohsiung Univ Appl Sci, Dept Mech Engn, Kaohsiung 80782, Taiwan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 2A期
关键词
nanocrystalline BaTiO3 thin films; RF magnetron sputtering; dielectric properties; leakage current density;
D O I
10.1143/JJAP.42.544
中图分类号
O59 [应用物理学];
学科分类号
摘要
The nanocrystalline thin films of BaTiO3 have been deposited on the Pt/Ti/SiO2/Si substrates by RF magnetron sputtering at 500degreesC. The film deposited at 500degreesC has a thickness of 450.0 nm and is composed of granular, crystallites of about 45.0 nm size. The crystallite size decreases with decreasing film thickness. The dielectric constant of the nanocrystalline BaTiO3 thin films increases with increasing film thickness.'For the film thicknesses of 150.0 and 450.0 nm, the leakage current density is below 1.0 x 10(-9) A/cm(2) for the applied voltage of less than 5 V.
引用
收藏
页码:544 / 548
页数:5
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