Electrical behavior of amorphous indium-gallium-zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer

被引：2

作者：

Yang, Heewang ^{[1
]}

Cho, Byungsu ^{[1
,2
]}

Park, Joohyun ^{[3
]}

Shin, Seokyoon ^{[1
]}

Ham, Giyul ^{[1
]}

Seo, Hyungtak ^{[4
,5
]}

Jeon, Hyeongtag ^{[1
,3
]}

机构：

[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

[2] Samsung Display Co Ltd, Tangjeong 336741, Chungcheongnam, South Korea

[3] Hanyang Univ, Dept Nanoscale Semicond Engn, Seoul 133791, South Korea

[4] Ajou Univ, Dept Mat Sci & Engn, Suwon 443739, South Korea

[5] Ajou Univ, Dept Energy Syst Res, Suwon 443739, South Korea

来源：

CURRENT APPLIED PHYSICS | 2014年 / 14卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

a-IGZO; TFTs; Au; Nanoparticles; GA-ZN-O;

D O I：

10.1016/j.cap.2014.09.027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We reported the effects on the electrical behavior of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) after introducing various positions and sizes of Au nanoparticles (NPs) in the channel layer. These TFTs showed an off-current increase and threshold voltage (Vth) shift compared to conventional a-IGZO TFTs. The effects of Au NPs are explained to form the carrier conduction path which causes the current leakage in the channel layer, and act as either electron injection sites or trap sites. Therefore, this study demonstrates that the optimized control of size and position of Au NPs in the channel layer is crucial for its application in the electrical stability improvement and Vth control of a-IGZO TFTs. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：1767 / 1770

页数：4

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