Fabrication and photoelectric properties of Oxide/CdTe structures

被引：6
作者：
Il'chuk, GA [1 ]
Ivanov-Omskii, VI
Rud', VY
Rud', YV
Bekimbetov, RN
Ukrainets, NA
机构：
[1] State Univ Lvivska Politekhnica, UA-79013 Lviv, Ukraine
[2] St Petersburg State Tech Univ, St Petersburg 195251, Russia
[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 09期
关键词：
Cadmium; Magnetic Material; Technological Process; Energy Barrier; Electromagnetism;
D O I：
10.1134/1.1309422
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A new technological process is proposed for forming an energy barrier in cadmium telluride crystals, and rectifying photosensitive anisotype and isotype structures are obtained. The photoelectric properties of the obtained structures and their dependence on the geometry of illumination with natural or linearly polarized light were investigated and are discussed. The new technology can be applied to the fabrication of different kinds of photoconversion structures based on cadmium telluride. (C) 2000 MAIK "Nauka/ Interperiodica".
引用
收藏
页码：1058 / 1061
页数：4
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