Low temperature and high concentration ozone prepared ultra-thin HfO2 dielectric films

With low temperature and high concentration ozone oxidation, ultra-thin HfO(2) films were fabricated on silicon substrate. The chemical bonds were analyzed by investigating the chemical shifts of Hf 4f and Si 2p core-level spectra of x-ray photoelectron spectroscopy. The chemical composition was determined by Rutherford backscattering spectrometry spectra. The capacitance-voltage curves obtained from the metal-oxide-semiconductor capacitors consisting of the ozone oxidized HfO(2) show a negligible hysteresis variation of about 5mV and a comparably low fixed charge density.