The electrical properties of n-CdS/p-CdTe and n-ZnS/p-CdTe heterojunctions fabricated by a combination of SILAR and vacuum deposition techniques

被引：4
作者：
Ashith, V. K. [1 ]
Priya, K. [2 ]
Rao, Gowrish K. [2 ]
机构：
[1] St Philomena Coll, Dept Phys, Puttur 574202, Karnataka, India
[2] Manipal Acad Higher Educ, Manipal Inst Technol, Dept Phys, Manipal 576104, Karnataka, India
来源：
PHYSICA B-CONDENSED MATTER | 2021年 / 614卷
关键词：
SILAR; Vacuum deposition; CdS; ZnS; CdTe; Heterojunction; THIN-FILMS;
D O I：
10.1016/j.physb.2021.413025
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The paper reports successful fabrication of CdS/CdTe and ZnS/CdTe heterojunctions by a combination of two different deposition techniques viz. successive ionic layer adsorption and reaction (SILAR) and conventional vacuum deposition. The SILAR deposited CdS and ZnS layers formed well adherent and stable heterojunctions with the vacuum deposited CdTe. The electrical characteristics of the heterojunctions were analyzed by thermionic emission model and Cheung's model. The ideality factor, series resistance, barrier height, space charge density and thickness of the depletion region were determined by rigorous I-V, J-V and C-V characterization. The barrier heights of the devices were found to be in the range of 0.8 eV-0.9 eV. The thickness of the depletion region was found to be 5.2 nm and 7.1 nm while the space charge density was found to be 3.6 x 1022 m 3 and 1.59 x 1021 m-3, respectively, for CdS/CdTe and ZnS/CdTe heterojunctions.
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页数：7
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