Prospects of new technologies for power electronics in the 21st century

被引：0

作者：

Akagi, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo, Japan

来源：

IEEE/PES TRANSMISSION AND DISTRIBUTION CONFERENCE AND EXHIBITION 2002: ASIA PACIFIC, VOLS 1-3, CONFERENCE PROCEEDINGS: NEW WAVE OF T&D TECHNOLOGY FROM ASIA PACIFIC | 2002年

关键词：

FACTS controllers; power conversion; power electronics; power semiconductor devices;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The emergence of power semiconductor devices such as insulated-gate bipolar transistors (IGBTs) or injection-enhanced gate transistors (IEGTs) and gate-commutated turn-off (GCT) thyristors or integrated gatecommutated thyristors (IGCTs) enables power conversion systems to expand into utility, leading to FACTS controllers. This paper describes prospects and directions of power electronics in the 21st century, with much focus on silicon-carbide devices suitable for the next-generation FACTS controllers.

引用

页码：1399 / 1404

页数：6

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