Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

被引：12

作者：

Ostermaier, C. ^{[1
]}

Pozzovivo, G. ^{[1
]}

Basnar, B. ^{[1
]}

Schrenk, W. ^{[1
]}

Schmid, M. ^{[2
]}

Toth, L. ^{[3
]}

Pecz, B. ^{[3
]}

Carlin, J. -F. ^{[4
]}

Gonschorek, M. ^{[4
]}

Grandjean, N. ^{[4
]}

Strasser, G. ^{[1
]}

Pogany, D. ^{[1
]}

Kuzmik, J. ^{[1
,5
]}

机构：

[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[2] Vienna Univ Technol, Inst Appl Phys, A-1040 Vienna, Austria

[3] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

[4] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland

[5] SAS, Inst Elect Engn, Bratislava 84104, Slovakia

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期

关键词：

aluminium compounds; annealing; diffusion; grain boundaries; high electron mobility transistors; III-V semiconductors; indium compounds; iridium; transmission electron microscopy; wide band gap semiconductors; RELIABILITY; DEGRADATION; CAPACITANCE; CONTACTS;

D O I：

10.1063/1.3458700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on an annealing-induced "gate sinking" effect in a 2-nm-thin In0.17Al0.83N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between the gate metal and the InAlN layer and revealed diffusion of oxygen into iridium during annealing. Below 700 degrees C the diffusion is inhomogeneous and seems to occur along grain boundaries, which is consistent with the capacitance-voltage analysis. Annealing at 700 degrees C increased the gate capacitance over a factor 2, shifted the threshold voltage from +0.3 to +1 V and increased the transconductance from 400 to 640 mS/mm. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3458700]

引用

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