GaN smart power IC technology

被引：42

作者：

Wong, King-Yuen ^{[1
]}

Chen, Wanjun ^{[1
,2
]}

Liu, Xiaosen ^{[1
]}

Zhou, Chunhua ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

[2] UESTC, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 07期

关键词：

III-V semiconductors; integrated circuits; power electronics; ALGAN/GAN HEMTS; PLASMA TREATMENT; ENHANCEMENT-MODE; CIRCUITS; VOLTAGE;

D O I：

10.1002/pssb.200983453

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

GaN smart power chip technology has been realized on the GaN-on-Si platform, featuring monolithically integrated high-voltage power devices, and low-voltage peripheral devices for mixed-signal functional blocks. In particular, this paper presents the imperative analog functional block - the voltage reference generator for smart power applications with wide-temperature-range stability. These circuits are shown to be capable of proper functions from room temperature (RT) up to 250 degrees C, featuring a negative reference voltage of -2.21 V at RT, and -2.13 V at 250 degrees C. The optimized voltage reference generator achieved less than 0.5 mV/degrees C drift. It can be used to create a reference voltage for various biasing and sensing circuits. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1732 / 1734

页数：3

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